A method for accessing a phase change memory device, and phase change memory device

A method for accessing a phase change memory device, comprising: Providing a plurality of phase change memory cells connected at intersections of several bit lines and a plurality of word lines; Grouping a first subset of bit lines in a first group and a second subset of bit lines in a second group; Selecting at least one bit line of the first and the second group; Supplying currents to the at least one bit line which is selected from the first and the second group; Selecting a word line; and Biasing the selected word line, wherein selecting at least one bit line in the first and the second group comprises selecting a first bit line in the first group and, during the first bit line is selected, includes selecting a second bit line in the second group to the selected word line symmetrically to the first bit line is arranged in the first group with respect to a center of the selected word line.