A Graphene Self-Switching Diode Bridge Rectifier

Here we present theory and measurements for a bridge rectifier formed from arrays of graphene self-switching diodes (GSSDs). Graphene’s extremely high carrier mobility allows GSSDs to work at THz frequencies, with the bridge rectifier structure allowing for full wave rectification of an AC signal. We derive an equation for the voltage output of a GSSD bridge rectifier, predicting a quadratic dependence on input current. This relationship is confirmed using AC and DC measurements. The fabricated rectifier has a high room temperature intrinsic responsivity of 3,230 V/W at low frequency and a low noise equivalent power of 7.0 pW/Hz1/2. Moving forward, similar devices using CVD graphene have been tested and shown to function with high responsivity.