A Theory of Currency Board with Irrevocable Commitments
2002
A DRAM charge storage structure including of a p-channel access FET in an n- doped well of a p- doped substrate, a p- channel charge storage capacitor, conductive apparatus connecting a gate of the charge storage capacitor to a drain of the FET, and apparatus for applying a boosted word line voltage to a gate of the FET.
Keywords:
- Correction
- Cite
- Save
- Machine Reading By IdeaReader
15
References
0
Citations
NaN
KQI