A 20 kpixels CdTe photon-counting imager using XPAD chip
2008
Abstract A 20 kpixels CdTe sensor has been hybridized on XPAD3S CMOS photon-counting chips, forming a 19,200 pixels imaging device. P-type CdTe with rectifying contact has been employed. This sensor works in hole collection mode with a pulse shaping time of about 150 ns. Detector construction and operation are described, and first results obtained with 241 Am source as well as diffraction images using an X-ray synchrotron beam are presented. Polarization effects are present, but remain at a very manageable level.
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