Recent developments of InP-based quantum dashes for directly modulated lasers and semiconductor optical amplifiers
2008
We report on the recent advances in InP-based Quantum Dashes (Qdashes) material for 1.55μm optoelectronic devices.
We achieve highly uniform, reproducible and wavelength-controlled Qdashes, with a length ranging from 50nm to
500nm depending on the growth conditions. These Qdashes lead either to high modal gain distributed feedback (DFB)
lasers or low chirp semiconductor optical amplifier (SOA). Moreover, we demonstrate that Qdashes are compatible with
buried ridge stripe and shallow ridge technology and lead to very reliable lasers. Directly modulated lasers with 10GHz
bandwidth are demonstrated in continuous wave mode operation. 10Gb/s transmission over 25km in semi-cooled
operation is achieved using DFB buried lasers. Qdashes optimization leads to SOA with internal gain of 10 dB and a -3dB optical bandwidth of 120 nm at 50°C, paving the way for semi-cooled CWDM optical sources. Furthermore, low
chirp Qdashes SOA are evaluated as optical boosters after a modulated source. Although we still observe overshoots on
the amplified signal, the chirp, even in their saturation regime, is low enough to allow for 50 km of transmission at
10Gb/s.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
26
References
3
Citations
NaN
KQI