Full band Monte Carlo analysis of the uniaxial stress impact on 4H-SiC high energy transport

SiC is expected to be the next-generation semiconductor material especially for power devices, and some have been put into practical use. However, its stress response has not been completely elucidated, and there are concerns about performance degradation by mechanical stress in the wafer process and packaging. On the other hand, stress engineering may improve its performance.So, in this paper, we estimate the uniaxial stress impact on 4H-SiC by combination of first principal calculation and full-band Monte Carlo simulation. As a result, it was found that the stress dependence of the impact ionization coefficient of 4H-SiC is extremely small, and the risk of breakdown voltage degradation is low by small stress in manufacturing process. On the other hand, the electron mobility increases when tensile stress is applied, and it is expected that the device on-resistance will be reduced by stress engineering.