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C-2-7 Prototype of a high breakdown Voltage GaAs Schottky Barrier Diode for a 5.8 GHz-band rectifier
C-2-7 Prototype of a high breakdown Voltage GaAs Schottky Barrier Diode for a 5.8 GHz-band rectifier
2014
Marika Nakamura
Toshiyuki Tanaka
Yutaro Yamaguchi
Masaomi Tsuru
Yasuyuki Aihara
Yoshitaka Kamo
Atsushi Yamamoto
Yukihiro Homma
Eiji Taniguchi
Keywords:
Rectifier
Schottky barrier
Metal–semiconductor junction
Metal rectifier
Breakdown voltage
Avalanche diode
Transient-voltage-suppression diode
Electronic engineering
Materials science
Schottky diode
Optoelectronics
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