Time-differential Mößbauer spectroscopy of57Fe in silicon after Coulomb excitation by pulsed heavy ion beams

Coulomb excited57Fe was implanted into high purity silicon at room temperature. Inbeam time-differential Mosbauer spectra were measured with resonance counters. An approximation of the classical theory for reasonantly scattered radiation was derived and applied to the analysis of the data. There is no indication for nonstationary effects during the lifetime (140 ns) of the 14.4 keV state.