Crucible for multi-crystalline silicon crystallization or quasi-monocrystalline Si by recovery germ

The present invention relates to a crucible for directional solidification of a silicon ingot, said crucible comprising a mold for receiving the molten silicon, and a removable element diffusion barrier metal impurities and disposed on the bottom of the inner face said mold, the movable member being formed by all or part of a barrier layer formed by at least one material selected from the group consisting of silica SiO2, silicon nitride Si3N4, SiC silicon carbide, silicon carbonitride , silicon oxynitride, graphite and mixtures thereof and having a purity of at least 99.95% by weight, the barrier layer having a thickness suitable for the retention of impurities may diffuse out of the base during the directional solidification and cooling the silicon.