Atomic layer epitaxy of AlAs and AlxGa1xAs for device application

Abstract Atomic layer epitaxy (ALE) of the Al x Ga 1− x As material system for 0 ⩽ x ⩽ 1 has been demonstrated on a converted commercial reactor. A second-generation chamber design allows a broadened ALE region of operation over a wide temperature (550–650 °C) and reactant flow range. ALE of device quality GaAs and AlGaAs has been achieved and ALE growth of AlAs has been obtained for the first time. Background doping levels varied from high resistivity to 10 20 cm −3 and depended strongly on aluminum content x , growth temperature and V:III ratio. Also, uniformity results obtained from photoluminescence emissions of AlGaAs/GaAs quantum wells grown by ALE will be presented and discussed.