High-voltage LED chip preparation method

The invention provides a high-voltage LED chip preparation method. The method comprises the following steps: forming a plurality of first grooves and first trenches in a part of regions of a reflection metal layer; forming a plurality of second trenches in a part of regions of a first insulating layer on the reflection metal layer; forming a plurality of third trenches in a part of regions of a current diffusion metal layer; forming a plurality of second grooves in a part of regions of a second insulating layer; and forming a plurality of fourth trenches in an N-type GaN layer. Through conductive communication of the grooves and trenches, a high-voltage chip is formed. The high-voltage LED chip obtained through the method can be driven by a high voltage directly, is free of current crowding, and is excellent in heat dissipation performance.