Laser lift-off method for silicon wafer

The invention is applicable to the field of laser processing and discloses a laser lift-off method for a silicon wafer. The method comprises the following steps: firstly forming a series of burst points inside each silicon wafer; subsequently drawing the silicon wafers at the two sides of the plane where the burst points are positioned at a low-temperature condition along an opposite direction, so that the silicon wafers are separated along the burst points; at the low-temperature condition, the silicon wafers can be better separated according to the direction of a plane formed by a plurality of burst points; new cracks are hard to generate in other directions; finally seamless separation of the silicon wafers is realized; each separated silicon wafer is smooth and uniform in surface, high in processing yield and applicable to batch production.