Scaling of temperature sensors for smart power MOSFETs

Smart power MOSFETs used in automotive power applications are exposed to very high power dissipation when operated in short circuit or overload conditions. Therefore for optimum protection circuit design and reliability the knowledge of the maximum temperature on the power MOSFET and the temperature measured by the temperature sensor are required. In this work the performance of temperature sensors with different dimensions embedded in the power MOSFET is investigated experimentally and by simulation.