Characterization of junction parameters in n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/amorphous carbon composite/p-type silicon heterojunctions

Abstract The current density-voltage curves of n-type nanocrystalline iron disilicide/intrinsic ultrananocrystalline diamond/p-type silicon heterojunctions were measured and analyzed at different temperatures. Based on computation using TE theory, the ideality factor values were 1.12 at 300 K and 5.44 at 80 K. The barrier height valueswere 0.69 eV at 300 K and 0.20 eV at 80 K. These parameters are in agreement with those computed using Chueng’s and Norde’s methods. The series resistance ( R s ) computed by Chueng’s method were 300.88 Ω at 300 K and 4.29 MΩ at 80 K. These R s values are equal to those computed using Norde’s method.