LEDs based on InAs/InAsSb heterostructures for CO2 spectroscopy (λ = 4.3 μm)

Light-emitting diodes (LEDs) operating in a 4.1–4.3 μm wavelength range have been created on the basis of InAs/InAsSb heterostructures grown by metalorganic vapor-phase epitaxy. The output radiation power of LEDs is increased using flip-chip design. Investigation of the electrolumuinescent properties of LEDs with smooth and profiled output edge surface showed that the latter LEDs possess a greater efficiency, which is related to an increase in the radiation yield due to multiply repeated reflection from the curved surface. The output power of LED operating in a quasi-continuous wave mode was 30 μW at a current of 200 mA and that in a pulse mode was 0.6 mW at a current pulse amplitude of 2 A.