Growth of large ZnSe single crystal by CVT method

Abstract Large ZnSe single crystals with a diameter of 30 mm and a thickness of 25 mm were successfully obtained by the rotational chemical vapor transport (R-CVT) using iodine as a transport agent, which comprises the rotation of the horizontal growth ampoule with a constant frequency. Two-step annealing was developed to ensure the stable growth of the epitaxial layer by MBE on the obtained ZnSe substrates in addition to electrical conductivity. It was demonstrated that the optical properties of the CVT-grown ZnSe, photoluminescence and excitation of SA emission, was superior for the fabrication of white LEDs.