Research on junction termination of 6500V IGBT

In this paper, a novel junction termination design for 6500V IGBT is proposed. A floating P+ rings termination where the P+ rings are highly doped is less than 2500um. The termination is immune to interface charges at the Si/SiO2 interface and other layers at the top as well as in the moulding compound. The simulation results show that the breakdown voltages are all above 7000V when the interface charges change from -3E11cm−2 to 5E11cm−2. This device was fabricated and the test results show that the breakdown voltage is more than 7000V, which is agreement with the simulation results.