Significant internal quantum efficiency enhancement of GaN/AlGaN multiple quantum wells emitting at ~350 nm via step quantum well structure design

This work was supported by KAUST Startup and Baseline Funds (Grant No. BAS/1/1664/01-01); National Key RD National Basic Research Program of China (Grant No. 2012CB619302); Key Laboratory of infrared imaging materials and detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No. IIMDKFJJ-15-07); National Natural Science Foundation of China (Grant No. 61675079, 11574166, 61377034), and the Director Fund of WNLO.