Extending scatterometry to the measurements of sub 40 nm features, double patterning structures, and 3D OPC patterns
2008
This paper examines the extendibility of the scatterometry techniques to characterize structures pushing the limits of
current lithographic printing technologies. In particular, we investigate the limits of normal-incidence optical CD (NIOCD)
measurements using the smallest features afforded by the most recent generation of hyper-NA immersion
scanners. Special analysis techniques have also been developed and applied to cases relevant to double exposure and
double patterning lithography. Models were used successfully to decouple CD and overlay values associated with
patterning the first and second set of features on the wafer, using a single scatterometry measurement. These advances
pave the way to the development of full solutions for the general case of double patterning structures with two different
populations of lines or structures.
In addition, the current study focused on seeking a better understanding of the use of scatterometry 3D features
characterization, particularly as it relates to OPC model building and verification. The demonstration of tip-to-tip
measurements on 3D structures is very encouraging as it introduces the advantages of scatterometry, such as reduced
influence of line-edge roughness (LER) and better precision, to the practice of advanced OPC model building.
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