Design and Performance of an Analogue VLSI Cell for Pixel Detector Readout: ANAPIX CERN R&D 19 Collaboration - I.N.F.N. Aspide project

silicon pixel detectors. An analogue VLSI cell for hybrid pixel detector readout, ANAPIX, has been designed and tested. The chip has been manufactured in the FASELEC SACMOS 3 micron the second generation cell in a matrix arrangement. technology. A peak detector allows asynchronous signals to be processed without precise trigger timing. An equivalent noise charge of about 100 electrons r. m. s. has been achieved on the cell alone. The cell has been wire bonded to a silicon detector pixel matrix and in the laboratory energy spectra from radioactive gamma and beta sources have been recorded with an equivalent noise charge of 200 electrons nns. The dynamic range design target of 500 to SO000 electrons was not achieved yet, due to a no11 linearity around 4000 electrons. This problem is to be solved in the design of the second generation to be manufactured in a one micron technology. This new cell is to be connected via bump bonding to a detector, the first assemblies are expected to be ready in 1995.