Photovoltaic device with p-n-substrate type InGaN (indium-gallium nitride) multilayer film structure and manufacturing method thereof

The invention provides a photovoltaic device with a p-n-substrate type InGaN (indium-gallium nitride) multilayer film structure which is formed by superposing a substrate, an n-InyGa(1-y)N film and a p-InxGa(1-x)N film in sequence; y in the n-InyGa1-yN film is 0.05-0.3; and x in the p-InxGa1-xN film is 0.3-0.8. A manufacturing method of the photovoltaic device comprises the following steps by adopting an MOCVD (metal-organic chemical vapor deposition) technology: firstly, washing surface plasmons on a substrate surface; and then depositing the n-InyGa1-yN film and the p-InxGa1-xN film in sequence. According to the invention, the InGaN film provides an almost perfect matching band gap corresponding to a solar spectrum, thus making the situation that a single semiconductor material is utilized to design and manufacture a more efficient multijunction solar cell possible; the absorption coefficient and the carrier mobility of the InGaN film are high and the radiation resisting capacity ofthe InGaN film is strong; and the manufacturing method is simple in technology and easy to implement and can be promoted and applied in a large scale.