A method of producing a transparent conductive film glass process

The present invention discloses a method for transparent conductive film glass production, comprising the steps of: (1) annealing kiln, containing a silane, a gaseous source of oxygen-barrier layer precursor to an inert carrier gas, is fed to a temperature on the glass surface 460 ~ 480 ℃, the laser beam incident in parallel, the gaseous shielding layer precursor photochemical vapor reaction of dissociation occurs, a thickness of the shield layer 50 ~ 90nm in the glass surface is deposited; (2) annealing. within the kiln, a glass transition temperature of 435 ~ 455 ℃ range, the preform comprising a source of zinc vaporized aluminum source, a gaseous oxygen-containing precursor source conductive layer in an inert carrier gas, into the already deposited mask layer on the glass surface, using a laser beam incident in parallel, the gaseous precursor photo-conductive layer is a chemical vapor dissociation reaction occurs, the conductive layer having a thickness of 250 ~ 400nm in the glass surface. The present invention effectively reduces the temperature of the coating reaction, help improve the quality of the film, to improve the utilization of the precursor gas, it is conducive to a stable condition float line.