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Reduction of Vth Variation Utilizing HfSiOx for 45nm SRAM
Reduction of Vth Variation Utilizing HfSiOx for 45nm SRAM
2008
Tsutsui Gen
Tsunoda Kazuaki
Kariya Nayuta
Akiyama Yutaka
Abe Tomohisa
Maruyama Shinya
Fukase Tadashi
Suzuki Mieko
Yamagata Yasushi
Imai Kiyotaka
Keywords:
Random dopant fluctuation
Static random-access memory
Materials science
Electronic engineering
Hafnium
Electrical engineering
Optoelectronics
Correction
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