Ultrahigh Uniformity and Stability in NbOₓ-Based Selector for 3-D Memory by Using Ru Electrode

In this article, we demonstrate a high-performance Pt/NbO x /Ru selector based on metal–insulator transition (MIT), which exhibits low leakage current ( $5.67\times 10^{-{5}}\,\,\text{A}/$ cm2), excellent endurance (>106), and ultrahigh uniformity (<2.5%) in particular and performs great potential to achieve 3-D storage integration. Furthermore, the decrease of the threshold voltage drift and the improvement of stability can be interpreted as the formation of RuO2 layer at the interface between Ru electrode and oxide layer. The application of Ru in selector provides the industry with a choice to enhance the uniformity and stability.