High contrast optically bistable optoelectronic switches based on InGaAs/GaAs(100) conventional and inverted asymmetric Fabry–Pérot modulators grown via molecular‐beam epitaxy

High contrast ratio InGaAs based asymmetric Fabry–Perot reflection modulators, realized in both conventional and inverted geometry, were used to obtain high contrast optically bistable switches in various schemes utilizing both ‘‘normally on’’ and ‘‘normally off’’ types of modulators. The flexibility provided by the inverted structure in realizing novel optical and electrical interconnections is demonstrated.