Kinetics of implanting accelerated gas ions in crystalline solids

The authors consider theoretical models in which the influence of the potential barrier on the the transition of implanted atoms through the surface of a solid and traps for gas atoms are taken into account. Considered mainly is the case in which a solution of implanted particles with a concentration below the admissible limit is formed during irradiation; the reemission of the implanted particles depends upon the potential barrier at the surface. Analysis of the implantation of accelerated gas ions in solids has shown that the process depends upon the capture of implanted atoms by traps up to a certain high limit concentration. This is analytically reflected by the dependence of the implantation characteristics upon both the irradiation dose and the trap concentration.