Simulation of substrate influence on electric field in compression rectangular cavity

The plasma used for microwave plasma chemical vapor deposition diamond in a rectangular resonant cavity has poor stability and uniformity.The Ansoft software is used to simulate the electric field in the rectangular compression resonant cavity and optimize the device.In the simulation,it assumed that all the boundaries were defined as ideal electric conductor in addition to the microwave input port;microwave with plane wave form was got through the rectangular waveguide and coupled to the microwave resonant cavity;The result of electric field distribution in resonant cavity was achieved through the Maxwell's equations solved by high frequency structure simulator which suited for the model.The electric field distribution in cavity was simulated in different parameters that the substrate radii were 11 mm,13 mm,15 mm,17 mm and the depths of substrate inserted in the reaction cavity were1.5 mm,2 mm,2.5 mm,3 mm,4 mm,respectively.Numerical simulation results show that electric field strength in the compression resonant cavity is about 817 V /m which is almost double compared with that in standard waveguide cavity.The electric field strength inside the cavity is concentrated when the substrate radius is 13 mm and the depth of substrate inserted in the reaction cavity is 2 mm.