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Acemap > Paper > Double-doped In0.35Al0.65As/In0.35Ga0.65 As power heterojunction FET on GaAs substrate with 1 W outp

Double-doped In0.35Al0.65As/In0.35Ga0.65 As power heterojunction FET on GaAs substrate with 1 W outp

1999 
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