NiSi Tb alloy interlayer properties at NiSi/Si junctions for improving thermal stability and contact resistance

Abstract In this study, effect of Terbium (Tb) on electrical and thermal properties of NiSi/Si contacts are studied. A thin Tb interlayer was deposited at NiSi/Si junctions and using Rapid Thermal process (RTP), a new NiSi-Tb alloy was formed. The specific contact resistivity (ρc) was measured for NiSi-Tb alloys formed on n/p-Si substrates. The ρc of 6.61 & 3.57 × 10−5 Ω·cm2 for n-Si and 7.52 & 4.53 × 10−5 Ω·cm2 for p-Si, obtained for NiSi without and with Tb Interlayer correspondingly. The thermal stability properties show improvement beyond 500 °C by using Tb interlayer. The enhancement of interfacial properties by introduction of Tb interlayer could be responsible for the improvement of ρc and thermal stability.