ON-MEMBRANE MICROMECHANICAL PSEUDOMORPHIC HFET MICROWAVE CHARACTERIZATION

This article deals with characterization of on-membrane pseudomorphic HFET fabricated by micromechanical technology. The basic transistor parameters important for design of more complex circuits were calculated from S-parameters, measured in the frequency range 100 MHz up to 20 GHz. The small signal equivalent circuit was identified using genetic optimization algorithms as well. This permits a closer insight on parasitic elements affecting the device performance.