Electronic Recovery from Radiation Effects in CMNOS Structures

We consider the effects of ionizing radiation on Complementary Metal-Nitride-Oxide-Silicon structures for oxide thicknesses in the range of 20-50A. The bi-directional radiation-induced threshold-voltage shifts in CMNOS structures are interpreted in terms of charge accumulation at the nitride-oxide interface. The electronic recovery of pre-irradiation threshold voltage levels by carrier transport through the thin oxide is shown experimentally.