Comparison of single-and two-phase LPE growth methods for InGaAsP/InP lasers and LEDs

Abstract Two well known methods for growth of InGaAsP/InP material for emitters operating in the 1.3 μm range are the single phase method, in which accurately equilibrated melts used, and the two-phase method in which solid InP is present in the melt. Both of these methods have been applied at RCA Laboratories in the fabrication of lasers and LEDs. Performance of devices obtained by both methods was similar, and equivalent to the best values published in the literature. Thus the choice of methods must be made on the basis of other criteria and it was the purpose of this work to attempt to provide a basis for this choice. A number of runs were made with each process, using both identical melts, and melts with slight changes in composition. The resultant epitaxial layers were analyzed by X-ray diffraction and photoluminescence, and the uniformity and consistency of growth obtainable from the two methods are reported.