Design and fabrication of long-wavelength GaInNAs quantum well edge-emitting lasers

The paper presented comprehensive theoretical design study and experimental fabrication of long wavelength GaInNAs edge-emitting laser diode. The theoretical results reveals that optimal GaInNAs active region and device structure are acquired, where high material gain near 1.3 μm and precise optical mode confinement are obtained. Room temperature lasing emission around 1.27 μm with low threshold current and threshold current densities are achieved in broad area GaInNAs laser diode grown by molecular beam epitaxy. The theoretical results of photoluminescence spectrum and light-current-voltage characteristic shows a very good agreement with the experimental results.