A Universal Large-Signal Model for Hetero FieldEffect Transistors

The authors present an analytic, empirical largesignal model for the efficient simulation of Hetero Field Effect Transistors. The model has been extracted and verified for a 0.15µm AlGaAs/InGaAs/GaAs pHEMT as well as for a 0.2µm InP/InGaAs/InP pHEMT technology. It uses a new set of chargeconservative capacitance expressions as well as a dispersion model for accurate description of both static and dynamic IV characteristics. A large voltage regime is covered, ranging from the sub-threshold to forward gate conduction and linear to saturation operating regions. Typical HFET effects like self-heating, gain compression, impact ionization as well as particularities of capacitance characteristics are included. Model verification is carried out for static IV, high-frequency S-parameters as well as one- and two-tone power measurements at microwave frequencies for both types of transistors.