Improved interface uniformity of epitaxial HfGe 2 /Ge(001) contact by microfabrication and its electron conduction property

To realize ultra-low power consumption integrated circuits, the development of new advanced CMOS and Silicon photonics technology has been highly required. Germanium is one of promising candidate materials for next generation CMOS channel because of higher mobility of both electrons and holes and a lower energy bandgap compared to Si. However, a high contact resistance at metal/ n -Ge contact, which is mainly due to a high Schottky barrier height (SBH), is still a critical issue for the practical application of Ge CMOS. [1 , 2]