Effects of buffered HF cleaning on metal–oxide–semiconductor interface properties of Al2O3/InAs/GaSb structures

We studied the impact of buffered HF (BHF) cleaning on the interface properties of Al2O3/InAs/GaSb metal–oxide–semiconductor (MOS) structures fabricated by the ex-situ surface cleaning process. The Al2O3/InAs/GaSb MOS structures fabricated with BHF cleaning exhibited lower Dit values than those fabricated with sulfur passivation. In addition, the Al2O3/InAs/GaSb MOS structures fabricated with BHF cleaning were robust with respect to the MOS field-effect transistor fabrication process by using W gate metal with PMA in the 250–300 °C range.