Preparation of Ferroelectric NaNbO 3 Thin Films on MgO Substrate by Pulsed Laser Deposition

We have successfully fabricated good quality NaNbO 3 films on MgO substrate by pulsed laser deposition by using K-Ta-O (KTO) buffer layer. SrRuO 3 (SRO) lower electrode layer was deposited on KTO/(100)MgO substrate and then the NaNbO 3 film was deposited. X-ray diffraction showed that the NaNbO 3 film was epitaxially grown on a (100)SRO/KTO/(100)MgO substrate. The P-E hysteresis loop of the NaNbO 3 film was characteristic of ferroelectric behavior. The crystallographic and dielectric properties are discussed with a comparison of those of the NaNbO 3 films epitaxially grown on (100)SrTiO 3 substrate.