Mechanism of Degradation of Ge NMOSFET with Channel Ion Implantation and Its Recovery

Impact of channel engineering on Ge NMOSFET is investigated. Ion implantation in channel region generates defects. Vacancy defect acts as acceptor to increase hole concentration and the charged vacancy acts as scattering center to degrade channel carrier mobility and driving current. High temperature annealing at least at 700 °C must be performed to annihilate these defects and recover device characteristics.