Manifestations of induced instability of phase boundaries during thermomigration

A technique for detection of the theoretically predicted effect of transfer of a local disturbance from one phase boundary of a flat liquid zone to another during its thermomigration in a crystal is presented. The results of experimental studies of the peculiarities of an induced disturbance and its general effect on the stability of the flat zone are described. It is suggested to use the induced instability effect in silicon device structure engineering.