반도체 : 산화물반도체 박막트랜지스터 제작 및 전기적 특성 분석
2013
Thin-film transistors(TFTs) with silicon zinc tin oxide(SZTO) channel layer are fabricated by solution-process. The threshold voltage (Vth) shifted toward positive directly with increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than Sn, Zn, thus degenerate the oxygen vacancy (VO). As a result, the Si act as carrier suppressor and oxygen binder in the SZTO as well as a Vth controller.
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