Simulations on the electron back-scattering characteristics of ion barrier film

The simulation calculation and analysis of electron back-scattering characteristics for ion barrier films (IBFs) of Al2O3 was performed by Monte Carlo methods. A physical model for the interaction of low-energy electrons with solid was described. Trajectory and spatial distribution of the electrons were simulated with MATLAB software.The maximum ratio of the back-scattered electrons was 19% at the incident energy of 0.24 keV. Beyond this value, the number of backscattered electron decreased slowly with the increase of the incident energy. The back-scattering ratio increased almost linearly with the increase of IBF density. When the incident energy was 0.7 keV and the film thickness is higher than 7 nm, the electron back-scattering ratio was always ~17% for the Al2O3 IBF. This work provided a theory support for fabricating high performance low-level-light device.