Solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a silicon integrated-circuit

By inducing two-photon absorption within the active layer of a proprietary silicon test chip, we demonstrate here solid-immersion-lens-enhanced nonlinear frequency-variation mapping of a 500-MHz ring oscillator circuit at 1560 nm. This work compares the performance of conventional single-photon linear methodologies against advanced two-photon alternatives and reports a maximum laser-induced change in the oscillator stage-delay of approximately 1 ps, and a signal injection resolution of 260 nm.