두꺼운 air bridge 열분산과 backside 공정을 통한 In 0.4 GaAs MHEMT의 열적 특성 향상

One of the main obstacles of using GaAs metamorhpic HEMTs for power amplifiers is the power collapse due to the thermal crowding around the channel. By using thick air bridge thermal spreading and backside thinning and Cu bathtub structure, the thermal resistance of GaAs metamorhpic HEMTs could be reduced by 31.6%, from 91.139Kㆍ㎜/W to 62.300Kㆍ㎜/W.