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Harsh laser annealing techniques for improved crystallization for a-Si(Ge) layers deposited at 210°C
Harsh laser annealing techniques for improved crystallization for a-Si(Ge) layers deposited at 210°C
2009
Joumana El-Rifai
Ann Witvrouw
A. Abdel Aziz
Robert Puers
Christiaan Van Hoof
Sherif Sedky
Keywords:
Crystallization
Annealing (metallurgy)
Laser
Composite material
Ceramic materials
Materials science
laser annealing
Correction
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