CD dispersion across the lens field: Influence on transistor characteristics

Abstract In this study, the lens plus mask contribution to the Critical Dimension ( CD ) dispersion across the lens field is investigated by Electrical Linewidth Measurements ( ELM ) at the gate level. It is shown that these CD dispersions are an important contributor to the transistor characteristic dispersion observed on the wafer. By using this technique, stepper qualification can be performed more precisely. We also show that electrical linewidth measurements can be used in a lens characterization procedure.