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Corrigendum to “Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells” [J. Alloy. Compd. 868 (2021) 159211]
Corrigendum to “Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells” [J. Alloy. Compd. 868 (2021) 159211]
2021
Alexander Y. Polyakov
L. A. Alexanyan
M. L. Skorikov
A. V. Chernykh
Ivan Shchemerov
V.N. Murashev
Taehwan Kim
In-Hwan Lee
S. J. Pearton
Keywords:
Optoelectronics
Quantum well
Nanopillar
Alloy
Materials science
Dry etching
Correction
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