Suppressing the lateral growth during HVPE-GaN crystallization in the c-direction

Abstract Different configurations of the growth zone were examined for crystallization of HVPE-GaN. The motivation for this work was to suppress growth in the lateral directions which appears on the seed edges during crystallization in the [0001] direction. This phenomenon is a significant problem for growing thick GaN boules. Changes in the configuration involved placing molybdenum elements close to the growing crystal. Such a solution allowed to decrease the area of material deposited at the edges. The reason for this was examined with Computational Fluid Dynamics simulations. Distributions of reagents over the seed and the resulting supersaturation were examined. The value of the latter was lower near the edges of the crystal where the molybdenum elements were placed.