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Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET
Plasma Nitridation of HfO2 Enabling a 0.9 nm EOT with High Mobility for a Gate First MOSFET
2006
P. D. Kirsch
M. A. Quevedo-Lopez
Siddarth Krishnan
C. Krug
F. S. Aguirre
Robert M. Wallace
Byoung Hun Lee
R. Jammy
Keywords:
Nanotechnology
Plasma
MOSFET
Electronic engineering
Materials science
Optoelectronics
plasma nitridation
Correction
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