Piezoelectric properties of a near strain-free lead zirconate titanate thin films deposited on a Si substrate

Abstract Chemical solution deposition (CSD)-derived near strain-free lead zirconate titanate (PZT) thin films on a Si substrate were prepared by designing a buffer layer structure. Strain-free PZT thin films with different compositions ranging from Zr/Ti = 50/50 to 58/42 were obtained to demonstrate lattice strain effects on piezoelectric properties. Results show that a near strain-free condition was attained with a SrRuO 3 (SRO: 160 nm)/(La 0.5 ,Sr 0.5 )CoO 3 (LSCO: 90 nm)/LaNiO 3 (LNO: 120 nm)/stacking structure, even on a Si substrate. The highest effective d 33 value of the near strain-free PZT thin film was observed at 53/47 composition, which is the same as bulk materials, although the highest effective d 33 value was obtained from 58/42 composition under the compressive lattice strain condition.