Electrical characterisation of Al/n-Si/p-Si Schottky junctions prepared by plasma immersion implantation

Abstract Current–voltage and capacitance–voltage measurements on Al/n–Si/p–Si Schottky junctions prepared by plasma immersion implantation of H + and P + ions have been performed in the temperature range of 80–360 K. Schottky barrier heights up to 0.79 V have been obtained which value is among the highest ones reported for p-Si so far. The unusual electrical properties are discussed in terms of full depletion approximation, lateral inhomogeneity of barrier height, Fermi-level pinning and band gap broadening due to hydrogenation. An overview of electrical behaviour of metal/n/p Schottky junctions is presented.